Beyond LCD and OLED, mini‐LEDs and micro‐LEDs are expected to be a promising candidate for future displays. In this work, we fabricate an active matrix mini‐LEDs backlight based on a‐Si. The driving mechanism with 2T1C and process flow are discussed in detail. IR‐drop is analyzed and improved through several method because of the fact that high current output is necessary for backlight. The gray scale is controlled by PWM method with the number of 64 (6 bit), and a backlight with maximum brightness of 20,000nits is obtained.