
AbstractThe electronic band structures of InxGa1–xN and InxAl1–xN alloys are calculated by ab‐initio methods in a supercell geometry, and the effects of varying the composition and applying external pressure examined. Indium segregation is also simulated, and it is shown that it strongly influences the band gap and its pressure derivative. Both the band gaps and their pressure coefficients are considerably lower when In atoms are clustered, than when they are uniformly distributed. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
| selected citations These citations are derived from selected sources. This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically). | 7 | |
| popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network. | Average | |
| influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically). | Average | |
| impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network. | Average |
