
handle: 10281/23671
AbstractMaking use of a novel droplet epitaxy technique, we realize GaAs ring‐shaped quantum dots of high circular symmetry. Here, we report on photoluminescence (PL) study of single isolated quantum rings in magnetic field up to 10 T. Polarized PL signals show a significant reduction in their intensity at >6 T. Possible origins accounting for this observation are discussed. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
quantum nanostructures; dropet epitaxy, III-V semiconductors
quantum nanostructures; dropet epitaxy, III-V semiconductors
| selected citations These citations are derived from selected sources. This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically). | 7 | |
| popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network. | Average | |
| influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically). | Average | |
| impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network. | Average |
