Piezoresistive effect in silicon epitaxial layers

descriptionPublicationkeyboard_double_arrow_right Article 16 Oct 1973 Italy English Publisher:WileyJournal:Physica Status Solidi (a), volume 19, pages K133-K136 (issn: 0031-8965, eissn: 1521-396X,

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Authors: F. Conti; MORTEN, Bruno; C. Nobili; A. Taroni;

doi: 10.1002/pssa.2210190251

handle: 11380/743292

Piezoresistive effect in silicon epitaxial layers

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Abstract

This note are presented some experimental results on piezoresistive properties of p-type-boron doped silicon epitazial layers grown on single-crystal n-type silicon substrates.

Country

Italy

Related Organizations

University of Modena and Reggio Emilia
Italy

Keywords

piezoresistivity; epitaxial layers; silicon

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