Micromagnetic simulation is carried out to investigate the current‐driven domain wall (DW) in a nanowire with perpendicular magnetic anisotropy. A stepped nanowire is proposed to pin DW and achieve high information storage capacity based on multibit per cell scheme. The DW speed is found to increase for thicker and narrower nanowires. For depinning DW from the stepped region, the current density Jdep is investigated with emphasis on device geometry and material intrinsic properties. The Jdep can be analytically determined as a function of the nanoconstriction dimension and the thickness of the nanowire. Furthermore, Jdep is found to exponential dependent on the anisotropy energy and saturation magnetization, offering thus more flexibility in adjusting the writing current for memory applications.