AbstractMulti‐wire sawing is the main slicing technique for large multi‐ and monocrystalline silicon crystals in the photovoltaic and microelectronic industry. This paper describes the basic mechanisms by which slicing is achieved and develops a model for the material removal rate. It is shown that the hydrodynamic behavior of the slurry and the elastic interaction with the wire are an important aspect that has to be taken into account. The material removal occurs by the indentation of free floating SiC particles under the pressure of the wire. The microscopic fracture processes under the indented particles have been investigated and are described quantitatively. The numerical and experimental results are compared. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)