AbstractIn most cases, microwave amplifier linearization requires complex and voluminous circuitry of very critical tuning, which leads to poor cost effectiveness and poor reproducibility. In this article an innovative concept of IMD linearization, based on direct active device IMD characteristic shaping, is presented. Also, it is shown how recent advances in nonlinear MESFET modeling can be used to implement the idea. © 1993 John Wiley & Sons, Inc.