AbstractThe incremental microwave mobility values for electrons in the presence of a large applied dc field have been calculated in cadmium telluride, assuming a displaced Maxwellian distribution function for the energy of the electrons. It is found that both the real and imaginary parts of the parallel and perpendicular microwave mobility decrease monotonically with the applied dc field. The imaginary part of the microwave mobility, which is a measure of the contribution of free carriers to the dielectric constant, is higher in this material than in III‐V compound semiconductors and shows a peak in the submillimeter‐wavelength range.