AbstractThis article presents a method to design low‐profile TM incident retrodirective metasurface (RMS). The equivalent circuit model based on generalized sheet transition conditions (GSTCs) and modified Babinet's principle are used to design the unit cell of RMS for full reflection phase coverage (FRPC). The slots on the unitcell and the artificial magnetic conductor (AMC) ground are used for TM wave and low‐profile, respectively. The height of the designed RMS is reduced by 50%, compared with previous TM incident RMS. The measured bistatic pattern and efficiency are in good agreement with those of the simulation.