On the design of polarization‐insensitive semiconductor optical amplifiers

descriptionPublicationkeyboard_double_arrow_right Article 24 Sep 2002 Finland English Publisher:WileyJournal:Microwave and Optical Technology Letters, volume 35, pages 227-230 (issn: 0895-2477, eissn: 1098-2760,

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Authors: Weetman; Philip; Wartak, Marek;

doi: 10.1002/mop.10564

On the design of polarization‐insensitive semiconductor optical amplifiers

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Abstract

AbstractWe have used the 4 × 4 Luttinger–Kohn Hamiltonian to analyse the presence of delta‐strain in quantum well on the polarization properties of semiconductor optical amplifiers. The analysis is performed for a 1.55 μm InGaAsP/InP lattice matched system grown in the [001] direction with and without the electrostatic effects of the carrier charges. The importance of electrostatic effects is indicated. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 35: 227–230, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10564

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Finland

Related Organizations

Wilfrid Laurier University
Canada
VTT Technical Research Centre of Finland
Finland

Keywords

quantum wells, delta strain, semiconductor optical amplifiers

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