AbstractA precursor solution for semiconducting Si called liquid Si (liq‐Si) is synthesized, and semiconducting Si is inkjet‐printed. Satisfactory inkjet discharge is achieved using liq‐Si consisting of liquid‐phase polysilane with an average molecular weight of 2500 g mol−1. The printed liq‐Si is converted into amorphous Si by heating at 400 °C. The resulting Si film has a flat surface with a root‐mean‐square roughness of 0.8 nm. These results are extended to n‐ and p‐type Si films by synthesizing liq‐Si chemically doped with P and B compounds, respectively. Liq‐Si inkjet printing produces Si patterns without using traditional photolithography processes, opening up the field of printed Si electronics.