AbstractAiming at the problem of far‐end crosstalk between microstrip lines, a method to improve crosstalk by using the TL‐shaped defective microstrip structure (DMS) is proposed. This method optimizes the ratio of the capacitive coupling and the inductive coupling between coupled microstrip lines by etching TL‐shaped DMSs on the microstrip lines, reducing the strength of electromagnetic coupling, thereby achieving an improvement in crosstalk. The quantitative equivalent model, S‐parameters, and full‐wave EM simulations are used to analyze the frequency response of the TL‐shaped DMS and crosstalk between the microstrip lines. The results of High Frequency Structure Simulator software simulation and sample texts show that the TL‐shaped DMS can effectively improve the far‐end crosstalk while ensuring the transmission of signals on the microstrip line. In the frequency range of 0–8 GHz, the far‐end crosstalk can be improved by about 11 dB, and the maximum can be improved by 42 dB. Compared with other DMSs, the TL‐shaped DMS has better crosstalk improvement effect and practical application potential.