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International Journal of Circuit Theory and Applications
Article . 2015 . Peer-reviewed
License: Wiley Online Library User Agreement
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DBLP
Article . 2016
Data sources: DBLP
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Compact CMOS active quenching/recharge circuit for SPAD arrays

Authors: Ion Vornicu; Ricardo Carmona-Galán; Belén Pérez-Verdú; Ángel Rodríguez-Vázquez;

Compact CMOS active quenching/recharge circuit for SPAD arrays

Abstract

SummaryAvalanche diodes operating in Geiger mode are able to detect single photon events. They can be employed to photon counting and time‐of‐flight estimation. In order to ensure proper operation of these devices, the avalanche current must be rapidly quenched, and, later on, the initial equilibrium must be restored. In this paper, we present an active quenching/recharge circuit specially designed to be integrated in the form of an array of single‐photon avalanche diode (SPAD) detectors. Active quenching and recharge provide benefits like an accurately controllable pulse width and afterpulsing reduction. In addition, this circuit yields one of the lowest reported area occupations and power consumptions. The quenching mechanism employed is based on a positive feedback loop that accelerates quenching right after sensing the avalanche current. We have employed a current starved inverter for the regulation of the hold‐off time, which is more compact than other reported controllable delay implementations. This circuit has been fabricated in a standard 0.18 µm complementary metal‐oxide‐semiconductor (CMOS) technology. The SPAD has a quasi‐circular shape of 12 µm diameter active area. The fill factor is about 11%. The measured time resolution of the detector is 187 ps. The photon‐detection efficiency (PDE) at 540 nm wavelength is about 5% at an excess voltage of 900 mV. The break‐down voltage is 10.3 V. A dark count rate of 19 kHz is measured at room temperature. Worst case post‐layout simulations show a 117 ps quenching and 280 ps restoring times. The dead time can be accurately tuned from 5 to 500 ns. The pulse‐width jitter is below 1.8 ns when dead time is set to 40 ns. Copyright © 2015 John Wiley & Sons, Ltd.

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Spain
Keywords

Single-photon avalanche diode (SPAD), Tunable dead time, Afterpulsing reduction, tunable dead time, Active quenching/recharge (AQR) circuit, active quenching/recharge (AQR) circuit, Geiger mode, single‐photon avalanche diode (SPAD)

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selected citations
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This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
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