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Berichte der Bunsengesellschaft für physikalische Chemie
Article . 1986 . Peer-reviewed
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Interfaces in Solid‐State Reactions

Authors: C. B. Carter;

Interfaces in Solid‐State Reactions

Abstract

AbstractIllustrations of the structure of phase boundaries involved in solid‐state reactions in ceramic oxides and of the formation of grain boundaries by the movement of phase boundaries are presented. Examples of experimental studies have been chosen to emphasise how both the cations and anions can influence the structure of the phase boundaries and the manner in which the reaction proceeds. In the oxide systems discussed here, the phase boundaries tend to facet parallel to certain planes even in the case where the anion sublattice is effectively undisturbed. This observation emphasises that, although the anion sublattice often determines the interface structure, the influence of the cations on the selection of the boundary plane cannot be neglected. The discussion is focused here on the growth of spinel in three different oxide matrices, namely in a wustite phase (NiO), a rhombohedral sesquioxide (Al2O3) and an olivine ((FeMg)2SiO4).

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
9
Average
Top 10%
Top 10%
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