AbstractThe development of disilane‐bridged donor–acceptor–donor (D‐Si‐Si‐A‐Si‐Si‐D) and acceptor–donor–acceptor (A‐Si‐Si‐D‐Si‐Si‐A) compounds is described. Both types of compound showed strong emission (λem=ca. 500 and ca. 400 nm, respectively) in the solid state with high quantum yields (Φ: up to 0.85). Compound 4 exhibited aggregation‐induced emission enhancement in solution. X‐ray diffraction revealed that the crystal structures of 2, 4, and 12 had no intermolecular π–π interactions to suppress the nonradiative transition in the solid state.