Flexography‐Printed In2O3 Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate
Copyright policy )Flexography‐Printed In2O3 Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate
Industrially scalable and roll-to-roll-compatible fabrication methods are utilized to fabricate high-mobility (≈8 cm(2) V(-1) s(-1) ) nanocrystalline In2 O3 thin-film transistors (TFTs) on an flexible plastic substrate. Flexographic printing of multiple thin In2 O3 semiconductor layers from precursor-solution is performed on a Al2 O3 gate dielectric obtained via atomic layer deposition. A low-temperature post-contact-annealing step allows control of the TFT device turn-on voltage to ≈0 V for enhancement-mode operation.
ta114, Transistors, Electronic, ta221, Temperature, thin-film transistor, metal oxide, Indium, flexographic printing, Printing, Ink, printed electronics, ta216, ta116, Plastics, Mechanical Phenomena
ta114, Transistors, Electronic, ta221, Temperature, thin-film transistor, metal oxide, Indium, flexographic printing, Printing, Ink, printed electronics, ta216, ta116, Plastics, Mechanical Phenomena
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