Van der Waals Epitaxial Double Heterostructure: InAs/Single‐Layer Graphene/InAs

descriptionPublicationkeyboard_double_arrow_right Article 25 Sep 2013 Korea (Republic of) English Publisher:WileyJournal:Advanced Materials, volume 25, pages 6,847-6,853 (issn: 0935-9648, eissn: 1521-4095,

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Authors: Hong, Young Joon; Yang, Jae Won; Lee, Wi Hyoung; Ruoff, Rodney S.; Kim, Kwang S.; Fukui, Takashi;

doi: 10.1002/adma.201302312

pmid: 24115285

Van der Waals Epitaxial Double Heterostructure: InAs/Single‐Layer Graphene/InAs

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Abstract

Van der Waals (vdW) epitaxial double heterostructures have been fabricated by vdW epitaxy of InAs nanostructures on both sides of graphene. InAs nanostructures diametrically form on/underneath graphene exclusively along As-polar direction, indicating polarity inversion of the double heterostructures. First-principles and density functional calculations demonstrate how and why InAs easily form to be double heterostructures with polarity inversion.

Country

Korea (Republic of)

Related Organizations

The University of Texas System
United States
Pohang University of Science and Technology
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Sejong University
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Konkuk University
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Center for Art Studies
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Keywords

Nanowires, Static Electricity, Graphite, Particle Size, Crystallization, Indium, Arsenicals, Nanostructures

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