Accounting for scattering in the Landauer-Datta-Lundstrom transport model
Copyright policy )Accounting for scattering in the Landauer-Datta-Lundstrom transport model
Качественно рассматривается рассеяние носителей тока и тепла в транспортной модели ЛДЛ по ходу изменения времен рассеяния в процессе столкновений. На примере 1D проводника выводится базовое соотношение между коэффициентом прохождения Т и средней длиной свободного пробега . В качестве примера анализируются экспериментальные данные для Si MOSFET с привлечением моделей различной достоверности.
Scattering of carriers in the LDL transport model during the changes of the scattering times in the collision processes is considered qualitatively. The basic relationship between the transmission coefficient T and the average mean free path is derived for 1D conductor. As an example, the experimental data for Si MOSFET are analyzed with the use of various models of reliability.
нанофизика; наноэлектроника; рассеяние электронов; рассеяние фононов; коэффициент прохождения; длина свободного пробега; коэффициент диффузии; подвижность; Si MOSFET, УДК 537.32, nanophysics; nanoelectronics; electron scattering; phonon scattering; transmission coefficient; mean free path; diffusion coefficient; mobility; Si MOSFET
нанофизика; наноэлектроника; рассеяние электронов; рассеяние фононов; коэффициент прохождения; длина свободного пробега; коэффициент диффузии; подвижность; Si MOSFET, УДК 537.32, nanophysics; nanoelectronics; electron scattering; phonon scattering; transmission coefficient; mean free path; diffusion coefficient; mobility; Si MOSFET
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