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Article . 2017
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Определение спектров поверхностных состояний при значительном гистерезисе электрофизических характеристик МДП-структур на основе МЛЭ HgCdTe

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 2017 Russian

Определение спектров поверхностных состояний при значительном гистерезисе электрофизических характеристик МДП-структур на основе МЛЭ HgCdTe

Abstract

Использована специальная методика измерений электрофизических характеристик МДП-структур на основе МЛЭ HgCdTe, позволяющая исключить влияние гистерезисных явлений на результаты измерения первой производной емкости по напряжению. Предложены методы определения спектров поверхностных состояний в МДП-структурах на основе HgCdTe.

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Keywords

теллурид кадмия ртути, молекулярно-лучевая эпитаксия, полупроводниковые гетероструктуры, МДП-структуры, электрофизические исследования, приповерхностные слои

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
0
Average
Average
Average
Green