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Современные наукоемкие технологии (Modern High Technologies)
Article . 2010
Data sources: CyberLeninka - Russian open access scientific library
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Гетероэпитаксиальные структуры AlN/Al2O3 и GaN/Al2O3 для акустоэлектронных СВЧ устройств

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 2010 Russian Publisher:Общество с ограниченной ответственностью "Издательский Дом "Академия Естествознания"Journal:Современные наукоемкие технологии (issn: 1812-7320, Copyright policy )

Гетероэпитаксиальные структуры AlN/Al2O3 и GaN/Al2O3 для акустоэлектронных СВЧ устройств

Abstract

В работе проведены экспериментальные измерения кристаллографических свойств гетероэпитаксиальных тонкопленочных структур нитрида алюминия AlN, нитрида галлия GaN, выращенных на подложках из сапфира Al2O3 методом молекулярно-лучевой эпитаксии для создания на их основе СВЧ акустоэлектронных устройств.

Keywords

ЭПИТАКСИЯ,ГЕТЕРОЭПИТАКСИАЛЬНЫЕ СТРУКТУРЫ,ПЬЕЗОКРИСТАЛЛЫ,МОЛЕКУЛЯРНО-ЛУЧЕВАЯ ЭПИТАКСИЯ,ПОВЕРХНОСТНЫЕ АКУСТИЧЕСКИЕ ВОЛНЫ,КРИСТАЛЛОГРАФИЯ,АКУСТОЭЛЕКТРОННЫЕ СВЧ РЕЗОНАТОРЫ,ФИЛЬТРЫ

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
0
Average
Average
Average
gold