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Формирование барьеров Шоттки на кремнии n-типа методом LCVD

Формирование барьеров Шоттки на кремнии n-типа методом LCVD

Abstract

Барьер Шоттки формируется на поверхности кремниевой подложки nтипа импульсным LCVD из паров металлоорганического соединения. Приведены характеристики экспериментальных образцов диодов. Обсуждаются вопросы применения лазерно-пиролитических методов при создании структур детекторов излучений терагерцового диапазона спектра.

The Schottky barrier are forming on surface of n-Si substrate by pulsed LCVD from metal-organic compound vapor. The properties of diode’s operative embodiments are showed. The questions of using laser-pyrolytic methods for creation of terahertz spectral range radiation detector’s structures are discussed.

Keywords

БАРЬЕР ШОТТКИ, ИМПУЛЬСНЫЙ LCVD, МЕТАЛЛООРГАНИЧЕСКОЕ СОЕДИНЕНИЕ, ДЕТЕКТОР ИЗЛУЧЕНИЯ, ТЕРАГЕРЦОВЫЙ ДИАПАЗОН СПЕКТРА

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
0
Average
Average
Average
Green