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Engineering journal of Don
Article . 2009
Data sources: CyberLeninka - Russian open access scientific library
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Математическое моделирование резонансного туннелирования в полупроводниковых наноструктурах

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 2009 Russian Publisher:Федеральное государственное автономное образовательное учреждение высшего профессионального образования «Южный федеральный университет»Journal:Инженерный вестник Дона (eissn: 2073-8633, Copyright policy )

Математическое моделирование резонансного туннелирования в полупроводниковых наноструктурах

Abstract

В работе рассмотрены результаты математического моделирования резонансного туннелирования в полупроводниковых наноструктурах. Разработанная модель позволяет вычислять коэффициенты прохождения через двухбарьерную структуру и отражения от неё носителей заряда в зависимости от их энергии.

Keywords

ТУННЕЛИРОВАНИЕ,ПОЛУПРОВОДНИКОВЫЕ НАНОСТРУКТУРЫ,ФИЗИЧЕСКАЯ МОДЕЛЬ,ДВУХБАРЬЕРНУЮ СТРУКТУРУ,УРАВНЕНИЕ ШРЕДИНГЕРА,КОЭФФИЦИЕНТЫ ПРОХОЖДЕНИЯ,МАТЕМАТИЧЕСКАЯ МОДЕЛЬ,АЛГОРИТМ РЕШЕНИЯ

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    popularity
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    influence
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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
0
Average
Average
Average
gold