Дисертаційна робота присвячена встановленню загальних закономірностей впливу температури і розмірних та концентраційних ефектів на електро- та магніторезистивні властивості одношарових плівок FexCo1-x та тришарових плівкових систем FexCo1-x/Cu/FexCo1-x. Встановлено закономірності формування кристалічної структури і фазового складу, поведінки електрофізичних (питомий опір, ТКО), магніторезистивних (анізотропний і гігантський магнітоопір) і їх взаємозв’язку для плівкових сплавів та тришарових систем на їх основі в інтервалі товщин d = 5 – 80 нм і концентрацій CFe = 10 – 90 ат.% у температурному інтервалі 120 – 700 К. Виявлено, що свіжосконденсовані плівкові сплави FeхСо1-х (x > 0,3) мають фазовий склад, що відповідає ОЦК - FeхСо1-х з параметром гратки а = 0,292 – 0,293 нм. При x 0,3 фіксується ОЦК - FeхСо1-х та при x 0,3 dF = 20 – 40 нм та dN = 5 – 20 нм фазовий склад відповідає евтектиці ОЦК - FeхСо1-х + ГЦК - т.р. Cu(Fe) або т.р. Cu(Co) незалежно від умов термообробки. Після термообробки таких зразків з х 0.3) have a phase composition corresponding to bcc - FexCo1-x with the lattice parameter a = 0.292 – 0.293 nm. At x 0.3 and bcc- FexCo1-x-y + fcc - Coy is fixed at x 0.3, dF= 20-40 nm and dN= 5-20 nm, the phase state corresponds to the eutectic of bcc - FexCo1-x + fcc - s.s. Cu (Fe) or s.s. Cu(Co), regardless of the heat treatment conditions. After heat treatment of such samples with x 0.3, heat treatment does not change the phase state. It is found that FexCo1-x film alloy are homogeneous in thickness. Diffusion processes in FexCo1-x/Cu/FexCo1-x film systems with dF = 30 – 40 nm and dN = 10 – 20 nm have been studied and it is shown that they generally preserve the identity of is retained. The thermal and ion-stimulated diffusion causes the mutual penetration of Fe and Co atoms, which are the result of dissociation of FeCo molecules. The regularities in the field dependences of anisotropic and isotropic magnetoresistance for single-layer film materials and three-layer structures with different thicknesses of magnetic and non-magnetic layers and the concentration of components in FexCo1-x layers are established. The concentration and layers thickness ranges, in which anisotropic (positive longitudinal and negative transverse magnetoresistance) and isotropic (negative longitudinal and transverse magnetoresistance) character of magnetoresistance observed, have been identified. The experimental results of the annealing effect on the isotropic magnetoresistance value and the shape of magnetoresistive loops show that the MR behavior and its magnitude in the general case are determined by both the thickness of the ferromagnetic and nonmagnetic layers, and the concentration of the components in the layers. It has been shown experimentally that for all investigated three-layer systems at dF = 25 – 40 nm and dN = 3 – 20 nm, the isotropic character of magnetoresistance as a result of the spin-dependent electron scattering is observed. The maximum value of isotropic MR of 1% at room temperature is observed for Fe0,1Co0,9/Cu/Fe0,1Co0,9 as-deposited system with the same thickness of the magnetic and copper layers of 3 nm. In the case of thermomagnetic step-by-step annealing (through intermediate temperatures of 400, 500 K), the transition from isotropic to anisotropic nature of the magnetoresistance is observed. The exception is samples, in which the granular state forms. For structures with a concentration of CFe = 10 – 20 at.% and relatively thin layers (dF = 10 – 20 nm, dN = 5 – 15 nm) the anisotropic nature of the magnetoresistance in the initial state is observed. Annealing at a temperature of 550 K results in an isotropic magnetoresistance, as a result of the granular alloy based on Cu and Co atoms formations. The heat treatment at a temperature of 400, 550 K stimulates an increase in isotropic MR to 3.5 % at room temperature for the samples regardless of component composition and with dF = 20 – 30 nm, dN = 5 – 15 nm. Reducing the measurement temperature from room temperature to 120 K leads to an increase in the isotropic magnetoresistance magnitude by 1.2 – 1.5 times. The obtained experimental results indicate sufficiently high temperature stability of the properties of film structures based on the alloy FexCo1-x and Cu. This allows recommending thermal annealing in vacuum at a temperature of 550 or 700 K directly after the film deposition as one of the stages of the technological process at the formation magnetoresistive elements. It is shown that at the temperature dependencies of the resistivity of three-layer films, regardless of the component concentrations, three characteristic regions are fixed. These regions correspond to the realization of electron scattering on the defects of the crystal structure, grain boundaries, and interfaces, respectively. It has been shown experimentally and theoretically that the TCR value grows at the increase of the FexCo1-x film alloy thickness and the spacer layer thickness in three-layer systems (dF = 30 nm). The experimental and calculated data agree with an accuracy of 20 %. Physical processes in film materials studied from their possible application as sensitive elements with high temperature and time stability of multifunctional sensors and information devices for various purposes.