???????????????? ?????????????????????????? ???????????????????????????? ?? ???????????????????????????? ?????????????????????? ?????????????????????? ???????????????????? ???????????? ?????????????????????? ?????????????????? ?????????????????????????? ???????????????????????????? ?????????????? (??????) Si/Mg???Si ?? ???????????????? ?????????????????? ?? ?????????? ???????????????????????? ???????????? ?? ?????????????????? ???????????????????? 50???750??C. ?? ???????????????? ?????????????????? ?? ?????? Si/Mg???Si ???????? Si ??? ????????????????. ???????? Mg???Si ???????????????????????? ?????????? ???????????????? ?????????????? ?? ???????????????????????????????????????? ?????????????????????? Mg2Si ?? ???????????????????????????? ???????????????????????????? ??????????????????????. ?????? ???????????? ???? 450??C ?????????????????????? ???????????????????????????? ?????????? Mg???Si, ?????? ???????????????????????????? ?????????????????????? ?????????????????? ???????????????? ??, ????????????????????????????, ?????????????????????? ?????????????? ???? 7,3%. ???????????????????? ?????????? ?????? Si/Mg???Si ???????????????? ?? ???????????????????????????? ?????????? Si ?? ?????????????????? ???????????????????? 500???600??C, ?? ???????????????????? ???????? ???????????? ???????????????????????????? ?????????????? ?????????????????????? ???? 6,36%.

???????????????? ???????????????????????????? ???????????????????????????? ???? ???????????????????????????????? ?????????????????????? ?????????????????????? ???????????????????? ???????????? ???????????????????? ?????????????????? ???????????????????????????? ?????????????????????????????? ???????????????? (??????) Si/Mg???Si ?? ?????????????????? ?????????? ???? ?????????? ???????????????????? ?????????????? ?? ?????????????????? ???????????????????? 50???750??C. ?? ?????????????????? ?????????? ?? ?????? Si/Mg???Si ???????? Si ?? ??????????????????. ???????? Mg???Si ?????????????? ?????????? ?????????????? ?????????????? ?? ?????????????????????????????????? ?????????????????????? Mg???Si ?? ???????????????????????????? ???????????????????????????? ??????????????????????. ?????? ?????????????? ???? 450??C ?????????????????????????????? ?????????????????????????? ?????????? Mg???Si, ???? ?????????????????????????????? ?????????????????????? ?????????????? ???????????????? ??, ????????????????????, ???????????????????? ?????????????? ???? 7,3%. ?????????????????? ???????????? ?????? Si/Mg???Si ?????????????????? ???? ?????????????????????????? ?????????? Si ?? ?????????????????? ???????????????????? 500???600??C, ?? ???????????????????? ???????? ???????????? ?????????????????????????????? ???????????????? ?????????????????????? ???? 6,36%.

The study of multilayer Si/Mg???Si structure in initial state and after thermal annealing in temperature range 50???750??C by the methods of small-angle X-ray diffraction and cross-section transmission electron microscopy is carried out. As-deposited silicide layers are amorphous. Magnesium silicide layers are amorphous with nanocrystalline inclusions of Mg???Si in metastable hexagonal modification. After thermal annealing at T = 450??C, the Mg???Si layers are crystallized with increasing in density and, correspondingly, with 7.3% reduction in period of the Si/Mg???Si multilayer. The further annealing of Si/Mg???Si multilayer results in crystallization of Si layers in temperature range 500???600??C. Consequently, period of the Si/Mg???Si multilayer is decreased by 6.36%.