The invention relates to a photodiode, comprising a substrate (1) formed by a III-V semiconductor material; at least one light absorption layer (5); and at least one doped contact layer (31), wherein the absorption layer (5) is to be illuminated through the contact layer (31). According to the invention the contact layer (31) comprises or consists of a semiconductor material having an indirect band gap.The invention also relates to a method of fabricating a photodiode.