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Optische Interferenzanordnung zur Einkopplung von elektromagnetischer Strahlung in einen photonischen Kristall oder Quasikristall

Optische Interferenzanordnung zur Einkopplung von elektromagnetischer Strahlung in einen photonischen Kristall oder Quasikristall

Abstract

DE 102009030338 A1 UPAB: 20110111 NOVELTY - The arrangement has a coupling structure (2) to which multiple electromagnetic radiation fields are separately guided. The coupling structure is formed, arranged and aligned such that multiple electromagnetic field inputs (4a-4b) are brought into interference in a predefined interference sample (5) by the coupling structure in an inflow area (3) of a photonic crystal or quasi-crystal (1). The inflow area is arranged at a surface and/or in interior of the photonic crystal or quasi-crystal. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) a method for manufacturing an optical interference arrangement (2) a method for coupling electromagnetic radiation into photonic crystal or a quasi-crystal. USE - Optical interference arrangement for coupling electromagnetic radiation into a quasi-crystal or a photonic crystal e.g. three-dimensional photonic crystal or two-dimensional-three-dimensional-hybrid photonic crystal. ADVANTAGE - The coupling structure is formed, arranged and aligned such that multiple electromagnetic field inputs are brought to interference in the predefined interference sample by the coupling structure in the inflow area of the photonic crystal or quasi-crystal, thus ensuring optimization of overlapping of the mode fields of the coupling structure and the photonic crystal or quasi-crystal.

(A1) Die vorliegende Erfindung bezieht sich auf eine optische Interferenzanordnung zur Einkopplung von elektromagnetischer Strahlung in einen photonischen Kristall oder Quasikristall, umfassend: den photonischen Kristall oder Quasikristalll (1) und eine Einkoppelstruktur (2), die so ausgebildet, angeordnet und ausgerichtet ist, dass durch sie in einem an der Oberflaeche, auf der Oberflaeche und/oder im Inneren des photonischen Kristalls oder Quasikristalls (1) angeordneten Eintrittsbereich (3), insbesondere einer Einkoppelstelle, des photonischen Kristalls oder Quasikristalls (1) mehrere elektromagnetische Feldbeitraege (4a, 4b) in einem vordefinierten Interferenzmuster (5) zur Interferenz bringbar sind.

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
0
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