Methods of preparation and temporal stability of GaSe and InSe nanolayers
Copyright policy )Methods of preparation and temporal stability of GaSe and InSe nanolayers
GaSe and InSe nanolayers were obtained by mechanical exfoliation and physical vapor deposition methods on silicon substrates. Employing atomic force microscopy the surface morphology and thickness of obtained InSe and GaSe nanolayers were studied, as well as their temporal stability. The observed spectral positions of the Raman peaks were in agreement with the position of the peaks known for bulk and nanolayered InSe and GaSe samples
- National Research University of Electronic Technology Russian Federation
- National Research Tomsk State University Russian Federation
рамановские спектры, нанослои, квазидвумерные полупроводниковые наночастицы, селенид галлия, селенид индия, морфология поверхности, физическое осаждение из паровой фазы
рамановские спектры, нанослои, квазидвумерные полупроводниковые наночастицы, селенид галлия, селенид индия, морфология поверхности, физическое осаждение из паровой фазы
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