© 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. In this paper we present a comprehensive report on the issues found during the manufacturing of high-yield CMOS-MEMS sensors based on vapor-phase hydrogen fluoride (vapor- HF ) oxide etching. During the study we have identified the main issues affecting CMOS-MEMS high-yield manufacturing regarding the silicon oxide as a sacrificial material, the passivation as a release mask, the BEOL as structural material for MEMS design and the aluminum-sputtering as a sealing layer for the MEMS cavity. This study has been carried out by systematically analyzing over 100 full wafers in 10 different runs on four different foundries using 0.5 µm , 0.18 µm and 0.15 µm CMOS processes, containing both test structures and full-sensor designs. Peer Reviewed