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Sensor Electronics and Microsystem Technologies
Article . 2014 . Peer-reviewed
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PHYSICAL AND MODELLING CONCEPTS OF GALVANOMAGNETIC EFFECTS IN BIPOLAR SEMICONDUCTOR STRUCTURES

Authors: Glauberman, M. A.; Yegorov, V. V.; Kanischeva, N.. A; Kozel, V. V.;

PHYSICAL AND MODELLING CONCEPTS OF GALVANOMAGNETIC EFFECTS IN BIPOLAR SEMICONDUCTOR STRUCTURES

Abstract

Анализируются основные физические механизмы работы биполярных полупроводниковых транзисторных структур (БМС). Показано, что вертикальные магниточувствительные структуры подлежат исключению из класса БМС, а горизонтальные с точки зрения модельных представлений составляют единый класс независимо от направления магнитной оси. Механизмы чувствительности БМС, в которых определяющим параметром является подвижность носителей, допускают единое по форме модельное представление и поэтому могут рассматриваться как единый механизм перераспределения. Магниточувствительность БМС при определении ее эффективностью преобразования достаточно корректно описывается одномерным уравнением непрерывности, причем независимо от конкретных граничных условий.

Аналізуються основні фізичні механізми роботи біполярних напівпровідникових магніточутливих структур (БМС). Показано, що вертикальні магніточутливі структури підлягають вилученню з класу БМС, а горизонтальні з точки зору модельних уявлень складають єдиний клас незалежно від напрямку магнітної осі. Механізми чутливості БМС, в яких визначаючим параметром є рухливість носіїв, допускають єдине по формі модельне представлення і тому можуть розглядатися як єдиний механізм перерозподілу. Магніточутливість БМС при визначенні її ефективністю перетворення досить коректно описується одновимірним рівнянням безперервності, причому незалежно від конкретних межових умов.

The basic physical operation mechanisms of bipolar semiconductor magnetosensitive structures (BMSs) are analysed. The vertical structures have been shown to be subject to exclusion from the BMS class, and horizontal BMSs form a single class irrespective of their magnetic axis orientation. The BMS’s sensitivity mechanisms having the charge mobility as the determining parameter allow a in-single model notion, and can be viewed as a single redistribution mechanism. When determined by transduction efficiency, the BMS magnetic sensitivity is quite correctly described by one-dimensional continuity equation irrespective of the boundary conditions.

Keywords

напівпровідникові структури; магніточутливі структури; магнітотранзистори; моделювання, semiconductor structures; magnetosensing structures; magnetotransistors; modeling, полупроводниковые структуры; магниточувствительные структуры; магнитотранзисторы; моделирование

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
0
Average
Average
Average
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