The article deals with the filamentous Si0,97Ge0,03 crystals with transverse dimensions of 40 ± 2 μm grown by the method of chemical transport reactions in the closed bromide system using gold as a growth initiator. The focus of research was the influence of proton irradiation with doses up to 1∙1017 p+/cm-2 and the following thermal treatments at temperatures of 200 - 500°C on the magnetic susceptibility of these crystals. The dependence of the magnetic susceptibility on the intensity of the magnetic field of the proton irradiated filamentous Si0,97Ge0,03 crystals is described within the framework of the Langevin atom paramagnetism model and explained by the formation of defects of the vacancy type. The revealed increase in the radiation stability of Si0,97Ge0,03 crystals followed the combined effect of radiation and subsequent thermal treatments.