At the junction between a metal and a semiconductor there are always charge transfer phenomena that can disrupt a selective or ohmic contact. This are result of workfunction mismatches either forming a Schottky junction or by Fermi Level Pinning. This effects unless they are used for a specific purpose within the device, can be detrimental to overall efficiency of a photovoltaic solar cell. Dipole thin films are known to modify surface energy being able to completely disrupt fermi level pinning and modify Schottky junction energy barrier. In this work a summary of several dipoles sharing some similarities between them such as PFN, PEI, DNA and PAMAM have been used to prove that upscaling the strength of dipole layers provide enhanced photovoltaic results when in combination with the metallic electrode. © 2024 IEEE.