For the semiconductor subjected to the action of carrier-warming electric field and two quasi-monocromatic waves under impurity absorption the authors determined the differential equation set describing the trigonometric series coefficients for the distributions of carrier concentrations and electric field in the framework of one-dimensional field model. The obtained system was solved numerically that allowed the investigation of its dynamic states using self-organization methodology, namely Hausdorff dimension and Lyapunov exponents. It was shown that depending on the concentration of the shallow impurity and the intensity of the incident light wave it is possible to switch the system between the two oscillatory states, significantly different in the terms of motion stability.