Temperature Dependence of Heavy-Ion-Induced Leakage Current in SiC Power MOSFETs
Copyright policy )Temperature Dependence of Heavy-Ion-Induced Leakage Current in SiC Power MOSFETs
Temperature dependence of the heavy-ion-induced leakage current in silicon carbide (SiC) power MOSFETs has been studied. The devices exhibit an order of magnitude lower degradation rate for drain current at elevated temperatures compared to the values measured at room temperature. The degradation rates at different drain voltages and different temperatures were determined. The effect of temperature on the degradation of device parameters is presented, and the degradation mechanisms and implications to the power applications in radiation environments are discussed.
IEEE Transactions on Nuclear Science, 72 (4)
ISSN:0018-9499
ISSN:1558-1578
- University of Jyväskylä Finland
- Vanderbilt University United States
- ETH Zurich Switzerland
Heavy-ion irradiation; power MOSFET; silicon carbide (SiC); single-event leakage current (SELC); temperature, Accelerator Laboratory, Heavy-ion irradiation, silicon carbide (SiC), power MOSFET, silicon carbide ( SiC ), single event leakage current (SELC), Kiihdytinlaboratorio, temperature, hiukkasfysiikka, ydinfysiikka, heavy-ion irradiation, single-event leakage current (SELC)
Heavy-ion irradiation; power MOSFET; silicon carbide (SiC); single-event leakage current (SELC); temperature, Accelerator Laboratory, Heavy-ion irradiation, silicon carbide (SiC), power MOSFET, silicon carbide ( SiC ), single event leakage current (SELC), Kiihdytinlaboratorio, temperature, hiukkasfysiikka, ydinfysiikka, heavy-ion irradiation, single-event leakage current (SELC)
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