The subject of the study are processes of manifestation of instabilities of natural oscillations of semiconductor structures, which are caused by the mechanisms of interaction of charged particle flows in the presence of powerful external electromagnetic radiation. The goal is to obtain design relationships that allow determining the degree of deviation of the performance characteristics of semiconductor components from the norm, depending on the parameters of the external pulsed electromagnetic field. The task is to construct a model of interaction induced by external electromagnetic radiation currents with electrostatic oscillations of the semiconductor structure. The model is based on the realization of the resonance (Cherenkov) interaction of moving charges and electromagnetic oscillations under conditions where the phase velocity of the wave and the velocity of the charged particle are the same. The methods used: analytical methods for solving the Maxwell equations and the equations of the medium in the framework of the hydrodynamic approach. The following results are obtained. Investigations of the functioning of semiconductor components of electronic equipment under the influence of strong-pulsed electromagnetic fields are carried out. The nature of changes in the working capacity of semiconductor components of the hardware component base is determined. It is shown that the influence of pulsed electromagnetic radiation is accompanied by the appearance of currents in the conductive elements of products and the appearance of intrinsic internal fields. One of the types of reversible failures of the semiconductor element base of electronic products is determined, based on the interaction of currents induced by external radiation with the intrinsic fields of the structures that complete the product. Similar failures are realized under conditions of Cherenkov radiation, when the current is parallel to the boundary of the structure. It is shown that this interaction leads to energy losses of the induced currents to excitation of the natural vibrations of the structure, i.e. the appearance of a mode of oscillation generation, which is characterized by a change in the volt-ampere characteristics of radio products. Conclusions. The comparative analysis of quantitative evaluations of reversible failures of semiconductor devices depending on the spatial configuration of the acting field, in which the induced current is paralleled to the structure boundary, allows solving problems of optimizing the degree of distortion of the performance characteristics of these devices. The results obtained in the work can be used to evaluate the efficiency of active radioelectronic devices, for example, amplifiers, generators and converters of electromagnetic oscillations in the millimeter and submillimeter ranges under the influence of powerful external pulsed electromagnetic fields.