descriptionPublicationkeyboard_double_arrow_right Article 01 Mar 2017 English Publisher:Pleiades Publishing LtdJournal:Journal of Communications Technology and Electronics, volume 62, pages 314-316 (issn: 1064-2269, eissn: 1555-6557,

Authors: Voytsekhovskiy, Alexander V.; Gorn, Dmitriy Igorevich;

doi: 10.1134/s1064226917030214

Analysis of the nBn-type barrier structures for infrared photodiode detectors

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Abstract

Modern trends in the technology of CdxHg1–xTe-based photosensitive barrier structures for the middle and far infrared bands, which can operate at near-room temperatures, are analyzed. Main approaches to solving the problem of increasing the photodiode-detector operating temperature have been considered and analyzed.

Related Organizations

National Research University of Electronic Technology
Russian Federation
Tomsk State Pedagogical University
Russian Federation

Keywords

барьерные структуры, инфракрасные фотодиоды, фотодетекторы

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