Ion-Gated Transistors (IGTs) are a promising technology for neuromorphic computing, offering processing rates and energy efficiency. These devices support low-power training and operation of neural network algorithms while integrating both long-term and short-term modulation within a single system. The suitability of IGTs for neuromorphic applications depends critically on their time-resolved behaviour, governed by the doping mechanism. Specifically, the ionic permeability of the semiconducting channel dictates whether the device operates via electrochemical (three-dimensional) or electrostatic (two-dimensional) doping, leading to varying response times. This work focuses on controlling the response time of WO3-based IGTs using aqueous electrolytes—Li2SO4, Na2SO4, and K2SO4—as the gating media. We systematically study the effects of gate-source voltage (Vgs) pulse parameters (frequency, duration, and number) and sampling time on synaptic behaviour. These parameters are tuned to optimize ion intercalation and channel conductivity, enabling precise modulation of synaptic plasticity. Our findings demonstrate the tunability of WO3-based IGTs for neuromorphic applications, providing insights into the interplay between ion gating medium properties and channel dynamics. This work highlights the potential of these devices for energy-efficient and adaptive artificial synapses.