
Abstract This paper reports the results of structural, photoluminescence and Raman characterization of thick Cd 1− x Zn x Te films with different zinc concentration obtained by the close spaced vacuum sublimation method. The analysis of the X-rays patterns allows us to determine the effect of the zinc concentration on crystal quality of the films. It was found that samples with x ≈ 0.10 and x ≈ 0.32 have high crystal quality. However, with increasing of zinc concentration the crystal quality decreases. This result was confirmed by the photoluminescence study. Namely, the significant degradation of optical properties for the samples with high zinc concentration ( x > 0.32) was observed. Raman spectroscopy reveals the relation between zinc concentration and vibrational properties of the films. Also, the micro-Raman method shows that obtained films are uniform and free of tellurium inclusions.
crystal structure, Потрійні напівпровідникові сполуки, Lattice defects, Дефекты кристаллической решетки, Тройные полупроводниковые структуры, 530, Semiconducting ternary compounds, Рамановская спектроскопия, lattice defects, рентгенівська дифракція, дефекти гратки, потрійні напівпровідникові сполуки, Crystal structure, рентгеновская дифракция, Раманівська спектроскопія, Кристаллическая структура, Дефекти кристалічної гратки, фотолюминесценция, semiconducting ternary compounds, X-ray diffraction, фотолюмінесценція, Raman spectroscopy, photoluminescence, кристалічна структура, тройные полупроводниковые соединения, дефекты решетки, кристаллическая структура, Кристалічна структура
crystal structure, Потрійні напівпровідникові сполуки, Lattice defects, Дефекты кристаллической решетки, Тройные полупроводниковые структуры, 530, Semiconducting ternary compounds, Рамановская спектроскопия, lattice defects, рентгенівська дифракція, дефекти гратки, потрійні напівпровідникові сполуки, Crystal structure, рентгеновская дифракция, Раманівська спектроскопія, Кристаллическая структура, Дефекти кристалічної гратки, фотолюминесценция, semiconducting ternary compounds, X-ray diffraction, фотолюмінесценція, Raman spectroscopy, photoluminescence, кристалічна структура, тройные полупроводниковые соединения, дефекты решетки, кристаллическая структура, Кристалічна структура
| selected citations These citations are derived from selected sources. This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically). | 23 | |
| popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network. | Top 10% | |
| influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically). | Top 10% | |
| impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network. | Top 10% |
