The aim of this study is to produce a diode, which is a basic electronic circuit element, and analyze its physical characterization. In this study, a diode was produced from CdS and C10H10N2 films, and its structural, optical, and electrical properties were investigated. First, a thin CdS film was deposited on an ITO substrate using the CBD method. Then, a C10H10N2 film was coated on this CdS film by the spin coating method. The CdS film has n-type semiconductor properties, whereas the C10H10N2 film has p-type semiconductor properties. XRD, SEM, AFM, UV-Vis spectroscopy, and IV measurements were performed on the produced films. According to the XRD result, a sharp peak at 27.07° was observed in the hexagonal phase of CdS. At this angle, a grain size of 33.3 nm was calculated according to the XRD result. Based on the SEM and AFM measurement results, it was determined that the film surface was uniform and dotted. According to the UV-Vis results, in addition to the d→d* transition, π→π* and n→π* transitions were also observed. From the I-V diagram, it was seen that the heterojunction structure of the CdS/C10H10N2 films had a diode property. The value of rectification factor was calculated as 2.91x102 from the I-V data. In addition, the ideality factor was calculated as 1.93 using the traditional method.