IR Photoinduced Piezoelectric Effects in Multi-Component Chalcogenides Ag2In(Ga)2Si(Ge)S(Se)6
Copyright policy )IR Photoinduced Piezoelectric Effects in Multi-Component Chalcogenides Ag2In(Ga)2Si(Ge)S(Se)6
The influence of external irradiation of CO2, CO, Er:glass, Nd:YA lasers on the piezoelectric properties of the Ag2In(Ga)2Si(Ge)S(Se)6 crystals was investigated. The maximum photoinduced changes in the piezoelectric coefficient were observed after irradiation with CO2 laser. CO photoinducing bicolour beams with 5.5 μm wavelength cause at least 4 times smaller increase in piezoelectric coefficients. Therefore, it can be expected that the primary mechanisms cause the excitation of the phonon subsystem.
chalcogenides; laser; photoinduced piezoelectric properties, халькогеніди, Physics, QC1-999, халькогеніди; лазер; фотоіндуковані п'єзоелектричні властивості, лазер, фотоіндуковані п'єзоелектричні властивості
chalcogenides; laser; photoinduced piezoelectric properties, халькогеніди, Physics, QC1-999, халькогеніди; лазер; фотоіндуковані п'єзоелектричні властивості, лазер, фотоіндуковані п'єзоелектричні властивості
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