To demonstrate the feasibility of producing low cost, high intensity LEDs using Anvil’s stress relief IP to grow high quality GaN on 3C-SiC on large diameter Si substrates.
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Anvil Semiconductors has developed technology that enables the growth of device quality 3C-SiC wafers on large diameter Si substrates for use in power devices, delivering the performance and efficiency benefits of SiC at the price of silicon. The IP resolves the problem of the stress which is inevitable when growing SiC on Si. This feasibility study determines whether the IP has applicability to LEDs with 3C-SiC providing an effective buffer layer for GaN growth on large diameter Si wafers. The stress relief technology may also enable the growth of GaN with reduced dislocation density, leading to low cost, high intensity LEDs. Such a cost/performance improvement would have a disruptive effect on the LED market making replacement of incandescent lights and compact fluorescents with solid state lighting commercially viable, potentially reducing the world energy consumption by some 11%.
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