puertas mos ndr

appsOther research productkeyboard_double_arrow_right Other ORP type 01 Jan 2009 Spain Publisher:CSIC - Instituto de Microelectrónica de Sevilla (IMS-CNM)

Authors: Avedillo, María J.; Núñez, Juan; Quintana, J. M.;

handle: 10261/112991

puertas mos ndr

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Abstract

La finalidad de este proyecto es contribuir al desarrollo de circuitos integrados utilizando dispositivos con una o varias regiones de resistencia diferencial negativa (NDR) en su característica I-V y, más especificamente, con diodos basados en el efecto túnel resonante (RTDs). En tecnologías III/V, estos dispositivos en combinación con transistores han demostrado reducción de área y consumo de potencia e incremento de velocidad frente a realizaciones convencionales, que se asocian a su característica con una región NDR

Puertas MOS NDR. Tecnología UMC 0.13µm 8 metales

No

Country

Spain

Related Organizations

Spanish National Research Council
Spain

Keywords

NDR

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