The GraNitE project aims at the realization of high quality graphene (Gr) heterostructures with thin films of Nitride (III-N) semiconductors, i.e. GaN, AlN and related alloys (AlxGa1-xN). These will be employed for the implementation of novel vertical devices, such as the Gr/AlGaN/GaN Schottky diode with a gate modulated Schottky barrier for logic applications, and the Hot Electron Transistor with Gr Base for ultra-high-frequency (ft>1THz) applications. In particular, taking benefit from the wide bandgap of III-N and from the high mobility 2DEGs of Gr and AlGaN/GaN interface, excellent Ion/Ioff ratios (>1e8) and very low off-state current (Ioff