The QUARMEN (QUAntum Research Master Education Network) EMJM aims at training experts in key concepts and technologies for quantum devices and information; more generally, it aims at preparing them for the challenges and opportunities offered by the second quantum revolution, and for the impact it will have on our society and our economy. Quantum science and technology in one of the fastest progressing fields of knowledge, and structuring research and development in this field is one of Europe’s priorities. In this context, QUARMEN attendees will be ready to develop innovative ideas and will have the opportunity of being directly involved in the activity of industrial and academic laboratories. In the second year, students can choose to further develop their skills in one of the specialized areas: quantum photonics, quantum materials, nanoscience, cryptography, quantum control, cold atoms.The program is built on the expertise and collaboration of four academic institutions: Paris-Saclay University (France), University of Porto (Portugal), University of Rome – La Sapienza (Italy), and University of Toronto (Canada). The privileged access to companies, academic institutions and research and innovation centres in Europe and North America will offer broad opportunities in terms of job placement and networking. A compulsory winter school focuses on science management and entrepreneurship. The medium of instruction is English but the students are also taught European languages and cultures. Throughout the programme, they are trained to develop critical thinking, creativity, leadership, entrepreneurship and risk-taking. The training is completed by an internship in academic or R&D laboratories during the fourth semester.At the end of the master, students will be awarded a multiple diploma, completed with a joint diploma supplement highlighting the added value of QUARMEN. Each institution will help for social integration as well as for addressing special needs.

The objectives of the interdisciplinary project IQubits are to (i) develop and demonstrate experimentally high-temperature (high-T) Si and SiGe electron/hole-spin qubits and qubit integrated circuits (ICs) in commercial 22nm Fully-Depleted Silicon-on-Insulator (FDSOI) CMOS foundry technology as the enabling fundamental building blocks of quantum computing technologies, (ii) verify the scalability of these qubits to 10nm dimensions through fabrication experiments and (iii) prove through atomistic simulations that, at 2nm dimensions, they are suitable for 300K operation. The proposed 22nm FDSOI qubit ICs consist of coupled quantum-dot electron and hole spin qubits, placed in the atomic-scale channel of multi-gate n- and p-MOSFETs, and of 60-240GHz spin control/readout circuits integrated on the same die in state-of-the-art FDSOI CMOS foundry technology. To assess the impact of future CMOS scaling, more aggressively scaled Si-channel SOI and nitride-channel qubit structures will also be designed and fabricated in two experimental processes with 10nm gate half pitch. The latter will be developed in this project. The plan is for the III-nitrides (III-N) qubits to be ultimately grown on a SOI wafer, to be compatible with CMOS. Because of their larger bandgap, III-N hold a better prospect than Si and SiGe for qubits with larger coupling energy and mode energy splitting, and 300K operation. As a radical breakthrough, the fabricated qubits will feature coupling energies on the order of 0.25-1 meV corresponding to control frequencies in the 60-240GHz range, suitable for operation at 3–12 degrees Kelvin, two orders of magnitude higher than today's qubits. The tuned mm-wave circuits allow for 10-20ps spin control pulses which help to filter out wideband thermal noise and largely enhance the ratio between the gating and the decoherence times. Thermal noise filtering and fast control of the spin may lead to even higher temperature operation for a given energy-level splitting.