Given the unprecedented demand for mobile capacity beyond that available from the RF spectrum, it is natural to consider the infrared and visible light spectrum for future terrestrial wireless systems. Wireless systems using these parts of the electromagnetic spectrum could be classified as nmWave wireless communications system in relation to mmWave radio systems and both are being standardised in current 5G systems. TOWS, therefore, will provide a technically logical pathway to ensure that wireless systems are future-proof and that they can deliver the capacities that future data intensive services such as high definition (HD) video streaming, augmented reality, virtual reality and mixed reality will demand. Light based wireless communication systems will not be in competition with RF communications, but instead these systems follow a trend that has been witnessed in cellular communications over the last 30 years. Light based wireless communications simply adds new capacity - the available spectrum is 2600 times the RF spectrum. 6G and beyond promise increased wireless capacity to accommodate this growth in traffic in an increasingly congested spectrum, however action is required now to ensure UK leadership of the fast moving 6G field. Optical wireless (OW) opens new spectral bands with a bandwidth exceeding 540 THz using simple sources and detectors and can be simpler than cellular and WiFi with a significantly larger spectrum. It is the best choice of spectrum beyond millimetre waves, where unlike the THz spectrum (the other possible choice), OW avoids complex sources and detectors and has good indoor channel conditions. Optical signals, when used indoors, are confined to the environment in which they originate, which offers added security at the physical layer and the ability to re-use wavelengths in adjacent rooms, thus radically increasing capacity. Our vision is to develop and experimentally demonstrate multiuser Terabit/s optical wireless systems that offer capacities at least two orders of magnitude higher than the current planned 5G optical and radio wireless systems, with a roadmap to wireless systems that can offer up to four orders of magnitude higher capacity. There are four features of the proposed system which make possible such unprecedented capacities to enable this disruptive advance. Firstly, unlike visible light communications (VLC), we will exploit the infrared spectrum, this providing a solution to the light dimming problem associated with VLC, eliminating uplink VLC glare and thus supporting bidirectional communications. Secondly, to make possible much greater transmission capacities and multi-user, multi-cell operation, we will introduce a new type of LED-like steerable laser diode array, which does not suffer from the speckle impairments of conventional laser diodes while ensuring ultrahigh speed performance. Thirdly, with the added capacity, we will develop native OW multi-user systems to share the resources, these being adaptively directional to allow full coverage with reduced user and inter-cell interference and finally incorporate RF systems to allow seamless transition and facilitate overall network control, in essence to introduce software defined radio to optical wireless. This means that OW multi-user systems can readily be designed to allow very high aggregate capacities as beams can be controlled in a compact manner. We will develop advanced inter-cell coding and handover for our optical multi-user systems, this also allowing seamless handover with radio systems when required such as for resilience. We believe that this work, though challenging, is feasible as it will leverage existing skills and research within the consortium, which includes excellence in OW link design, advanced coding and modulation, optimised algorithms for front-haul and back-haul networking, expertise in surface emitting laser design and single photon avalanche detectors for ultra-sensitive detection.

This first grant project will develop an MBE-LEEM system, combining in-situ state-of-the-art Molecular Beam Epitaxy and a Low Energy Electron Microscope. The project will increase capabilities in sample exchange between institutions, enabling the analysis of nucleation on complex samples, increase reproducibility and accuracy of flux measurements, increase reproducibility and accuracy of temperature control, increase the number of material sources, enabling the growth of new materials, increase safety, reduce down-time of the system and increase control during surface preparation. The development of the MBE-LEEM will enable close collaboration between Cardiff University and EPSRC National Centre for III-V Technologies and with IQE, a world leading semiconductor wafer company. The system will be used for basic research, providing a wealth of data on nucleation dynamics and key epitaxial processes for theorists across UK, and providing industrial and academic partners with a unique characterization technique to determine optimum growth parameters in complex epitaxial processes by analysing growth dynamics. The extended capabilities of the MBE-LEEM will be tested by studying the nucleation of MnAs on InAs, determining the conditions for nucleation of Zinc-Blende MnAs. The nucleation of half-metallic MnAs on an InAs buffer layer with thickness below 2 monolayers was shown by Kim et al. in 2006, but the process has not been reproduced and no explanation on the mechanism leading to Zinc-Blende MnAs has been provided. MBE-LEEM will produce videos of the nucleation of MnAs on InAs with different thicknesses, highlighting the evolution of MnAs crystal structure and morphology during nucleation. The fabrication of half-metallic semiconductors can be key for the development of spintronics. Follow-up research is projected after this first grant development project in order to analyse magnetic properties of half-metallic MnAs, and to apply MBE-LEEM to other key research on epitaxial processes, such as the integration of GaAs on Silicon, or the nucleation of nanostructures.

The past few decades have witnessed an explosive growth in the semiconductor material and device technologies and their profound impact in the shaping of modern society. After experiencing the booming development of personal computer (PC) technology in the 1990s and the upsurge of the Internet in the 2000s, we are embracing a new age of the Internet of Things. As the explosive growth of Internet Protocol (IP) traffic is driving data centres to the so-called "Zettabyte Era", today's electrical interconnects quickly became the bottleneck due to ohmic loss and RC delays of copper wires. Optical interconnects promise to break the bottleneck by enabling data in computers moving both across chips and from chip to chip through photons. Photons are electromagnetic waves with very high frequencies. They can travel at the speed of light and they are super-efficient information carriers. The realisation of optical interconnects requires all optical components from passive to active devices to be integrated on the same silicon-on-insulator platform. Despite great success in developing silicon-based light modulation and detection, the lack of an efficient light emitter due to the indirect bandgap properties of silicon continues to pose a major roadblock. In contrast to silicon, most of III-V compound semiconductors have a direct bandgap with excellent photon absorption and emission efficiency. It is widely perceived that integrating III-V semiconductors, the best available materials for light emitters, on silicon could unpin the transition from electrical to optical interconnects. Epitaxial growth of III-V materials in the desired areas on silicon offers a scalable, low-cost and high-throughput scheme to bring optical capabilities to silicon integrated circuits. However, there are several fundamental challenges associated with material incompatibility, including a large mismatch in the lattice constants and thermal expansion coefficients, and the growth of polar materials on non-polar substrates. Conventional III-V/Si epitaxy circumvents these challenges through multiple buffer layers on bulk silicon wafers. However, thick buffers limit process throughput and present a big barrier for efficient light coupling to the underlying silicon waveguides. In this project, an advanced epitaxy process will be developed to enable an III-V on insulator (XOI) structure integrated on silicon wafers. By taking advantage of the crystallographic geography and selective area growth in confined spaces, we aim to achieve dislocation-free micro-sized thin films on insulators without requesting complex buffer designs. Such a buffer-less platform can potentially support intimate integration of III-V compound semiconductors with silicon waveguides and open enormous opportunities in Si photonics. As a proof-of-concept demonstration, micro-disk lasers will be fabricated to validate the optical quality of the III-V structures and highlight its potential for photonics integration.

To help combat climate change, the UK has a target to reduce carbon emissions by 80% by 2050. This is an enormous task requiring changes to energy generation and supply. To limit the impact on scarce natural resources and the environment, these reductions need to be delivered by providing affordable green energy. The proposed programme will address this very target by developing high-efficiency and low-cost solar cells by growing III-V compound semiconductor self-organised structures on cheap and plentiful silicon. This proposal directly contributes to development of new solar materials and devices to enable the UK to lead in this priority area. The widespread implementation of photovoltaics (PV) [the conversion of sunlight into voltage and therefore power] and solar cells as one means of reaching sustainable energy production for the planet will require vast areas of semiconductor materials to be structured into PV cells in order to capture the power of sunlight. There are two general approaches taken: either to use very large area, low-cost and low-efficiency semiconductor materials (such as organic materials) or to use small-area highly-efficient but expensive semiconductor materials and concentrate the light into the small-area, Concentrator Photovoltaics (CPV). The cost of the housing is a significant cost of the PV cell and therefore making the material cheaper for the large area PV does not improve cost below a certain value. The efficiency of the CPV cells is being improved continuously by improved design, growth and fabrication. Experimentally III-V compound semiconductor CPV cells have recently achieved efficiencies of >40% making them the highest efficiency PV available in any technology. Further increase of efficiency for CPVs is the key for utilizing solar energy worldwide. There are two main design approaches to inorganic III-V semiconductor CPV solar cells: Multi-jumction SCs (MJSCs) and intermediate band solar cells (IBSCs). In MJSCs a number of semiconductor material junctions are connected in-series, each designed to efficiently absorb a section of the solar spectrum appropriate to its bandgap with the largest bandgap material placed at the front and the smallest bandgap material placed at the back. A single junction SC has a maximum predicted efficiency of 30% while a double-junction comprised of two optimised bandgaps increases the predicted efficiency to 41%. Much effort has gone into designing a number of MJSCs with an increased number of junctions. Intense effort is going into investigating materials to absorb near the peak of the spectrum around 1.0 eV. We propose to use 1.0-eV bandgap Quantum Dots (QDs) as a solution for this. A QD is one semiconductor embedded into another and arises from self-organised growth. QDs enable material combinations to be grown together that would not normally occur in a planar environment as strain is incorporated into the interface-this allows novel materials to be combined in a QD system opening up new material combinations and allowing these materials to be grown on silicon using only a thin germanium sandwich layer. In IBSCs an intermediate energy band (IB) is introduced into the energy gap of the single semiconductor material junction introducing three possible optical transitions. The photo-generated carriers in the intermediate level must only link to the host material through optical transitions for the IBSC to function correctly. The IBSC with one IB level is predicted to have ultra-high conversion efficiency up to 63% while increasing the number of IB levels up to 4 is predicted to increase efficiencies up to 80%. However these high efficiencies are not observed experimentally. We will investigate using QD systems to make IBSCs. We will exploit the advantages of both QD technology and germanium-on-silicon substrates to develop the low-cost and high-efficiency III-V/Si solar cells of both MJSC and IBSC design.

AlGaN/GaN high electron mobility transistors (HEMT) are a key enabling technology for future high efficiency military and civilian microwave systems. The aim of this proposal is to provide transformative insight into the underlying physical processes that cause degradation in GaN RF power amplifiers (PA). This is of strategic importance for the UK given its strong RF electronics base, due to the fact that GaN RF power electronics delivers a disruptive step change in systems capability through power densities as high as 40W/mm and frequencies exceeding 300GHz. The UK has internationally leading academic research groups in this field, including Bristol and Cardiff. The key issue addressed in this proposal is that device degradation under RF stress is distinctly different than under DC stress, often resulting in a large increase in source resistance, something that never occurs under DC stress and is not explicable by conventional models. This observation implies that a device in RF operation applies voltage/current stresses, which are inaccessible under static conditions, making it imperative to understand the interaction between the RF operating mode and the degradation mechanism. Bristol has provided seminal contributions to the international effort to understand DC GaN transistor degradation, where an understanding is slowly emerging that includes oxygen related reactions and diffusion processes, and dislocation linked breakdown in GaN transistors. This includes electroluminescence imaging for detection of leakage pathways, dynamic transconductance and transient analysis to detect trapping states, and the simulation of the effect of pulsed operation on bulk and surface traps. Over the last 15 years, Cardiff has established a world leading capability in RF PA design and measurement. In particular waveform engineering systems enable RF current/voltage waveforms to not only be measured directly but also to be manipulated almost at will. This manipulation of the waveform has allowed Cardiff to make seminal contributions to the understanding of high efficiency RF PA operation. In this project, the unique capability to 'tune' RF operation into extremely well defined states to enable 'controlled' RF stressing will be used to gain the step change understanding of RF device degradation. Reverse engineering of failed devices, electrical and electro-optical measurement before/after and during the RF stress, combined with physical device simulation, will be used to determine the RF specific degradation mechanisms. This capability to predict, engineer and measure the RF waveforms is key to achieving an understanding of the RF stresses that devices undergo during PA operation, and then to determine and specify the safe-operating-area for HEMTs. This project utilises a partnership with state-of-the-art foundries in Germany and the USA, allowing the project to use production quality devices, essential for the relevance of the work. The project will be guided in terms of its relevance through guidance and interaction with Selex for systems level issues and IQE for the materials. The key synergy of Bristol and Cardiff will address a vitally important issue for the uptake of this disruptive technology, the identification of the RF degradation mechanisms. This will enable the impact of different modes of RF operation to be predicted, and a novel robust RF reliability test methodology to be developed, thus delivering large UK benefit and international impact.