New approaches such as selective area growth, where crystal growth is lithographically controlled, allow the integration of bottom-up grown semiconductor nanomaterials in large-scale classical and quantum nanoelectronics. This calls for assessment and optimization of the reproducibility between individual components. We quantify the structural and electronic statistical reproducibility within large arrays of nominally identical selective area growth InAs nanowires. The distribution of structural parameters is acquired through comprehensive atomic force microscopy studies and transmission electron microscopy. These are compared to the statistical distributions of the cryogenic electrical properties of $256$ individual SAG nanowire field effect transistors addressed using cryogenic multiplexer circuits. Correlating measurements between successive thermal cycles allows distinguishing between the contributions of surface impurity scattering and fixed structural properties to device reproducibility. The results confirm the potential of SAG nanomaterials, and the methodologies for quantifying statistical metrics are essential for further optimization of reproducibility. The .zip file contains the AFM and electrical transport data that was used to support the findings in the associated publication. The AFM data is available in .asc format and can be opened with FOSS software such as Gwyddion or read via python. The transport data is arranged into python dictionaries for easy navigation. A jupyter notebook is included describing the dictionary structure and providing example code for accessing the data. -- Methods, materials and software: AFM, InAs, Gwyddion, python

Peer reviewed