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handle: 10261/310411
ADMR and FDMR of the control sample consisting of TaOx/Cu/Ti/MnPSe3; ADMR measured in the transversal configuration in the α plane, at T = 50, 90, and 150 K; FDMR measured in the transversal configuration in the α plane at T = 50 K and T = 90 K; TEM cross-section and EDX profile of a measured device; and discussion of the HMR mechanism (PDF).
Peer reviewed
Interfaces, Spintronics, Spin hall magnetoresistance, 2D materials
Interfaces, Spintronics, Spin hall magnetoresistance, 2D materials
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