publication . Article . 1995

absorption edge of silicon from solar cell spectral response measurements

M. J. Keevers; M. A. Green;
  • Published: 09 Jan 1995 Journal: Applied Physics Letters, volume 66, pages 174-176 (issn: 0003-6951, eissn: 1077-3118, Copyright policy)
  • Publisher: AIP Publishing
The optical absorption coefficient of crystalline silicon near the band edge is determined to values as low as 10−7 cm−1 by sensitive photocurrent measurements on high efficiency silicon solar cells. Structure due to three‐ and four‐phonon assisted absorption processes is observed. Discrepancies between absorption coefficient values around 10−2 cm−1 reported in the literature are resolved. The role of disorder theory in understanding the absorption edge of crystalline semiconductors such as silicon is discussed.
free text keywords: Two-photon absorption, Plasmonic solar cell, Silicon, chemistry.chemical_element, chemistry, Absorption (electromagnetic radiation), Optics, business.industry, business, Physics, Crystalline silicon, Analytical chemistry, Absorption edge, Absorption spectroscopy, Extended X-ray absorption fine structure
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