publication . Article . 2002

Simulation of non-ionising energy loss and defect formation in silicon

Mika Huhtinen;
  • Published: 11 Oct 2002 Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, volume 491, pages 194-215 (issn: 0168-9002, Copyright policy)
  • Publisher: Elsevier BV
Simulation studies of Non-Ionising Energy Loss (NIEL) in silicon exposed to various types of hadron irradiation are presented. A simulation model of migration and clustering of the produced primary defects is developed. Although there are many uncertainties in the input parameters it is shown that the model is consistent with experimental observations on standard and oxygen-enriched silicon. However, the model makes the rather dramatic prediction that NIEL scaling of leakage current and effective doping concentration can be violated significantly even in standard silicon. Although there are possible shortcomings in the model which might account for this, it is s...
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free text keywords: Nuclear and High Energy Physics, Instrumentation, Silicon, chemistry.chemical_element, chemistry, Energy loss, Leakage (electronics), Scaling, Ionizing radiation, Microscopic level, Statistical physics, Physics
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