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BPF-Based Thermal Sensor Circuit for On-Chip Testing of RF Circuits

descriptionPublicationkeyboard_double_arrow_right Article , Other literature type 26 Jan 2021 Spain English Publisher:MDPI AGJournal:Sensors, volume 21, page 805 (eissn: 1424-8220,

Authors: Altet Sanahujes, Josep; Barajas Ojeda, Enrique; Mateo Peña, Diego; Billong, Alexandre; Aragonès Cervera, Xavier; Perpiñà Gilabet, Xavier; Reverter Cubarsí, Ferran;

doi: 10.3390/s21030805

pmid: 33530334

pmc: PMC7865451

handle: 2117/360553 , 10261/227957

BPF-Based Thermal Sensor Circuit for On-Chip Testing of RF Circuits

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Abstract

A new sensor topology meant to extract figures of merit of radio-frequency analog integrated circuits (RF-ICs) was experimentally validated. Implemented in a standard 0.35 μm complementary metal-oxide-semiconductor (CMOS) technology, it comprised two blocks: a single metal-oxide-semiconductor (MOS) transistor acting as temperature transducer, which was placed near the circuit to monitor, and an active band-pass filter amplifier. For validation purposes, the temperature sensor was integrated with a tuned radio-frequency power amplifier (420 MHz) and MOS transistors acting as controllable dissipating devices. First, using the MOS dissipating devices, the performance and limitations of the different blocks that constitute the temperature sensor were characterized. Second, by using the heterodyne technique (applying two nearby tones) to the power amplifier (PA) and connecting the sensor output voltage to a low-cost AC voltmeter, the PA’s output power and its central frequency were monitored. As a result, this topology resulted in a low-cost approach, with high linearity and sensitivity, for RF-IC testing and variability monitoring.

Country

Spain

Related Organizations

Spanish National Research Council
Spain
University of Barcelona
Spain
Universitat Polite`cnica de Catalunya
Spain
Universitat Politècnica de Catalunya
Spain
Institute of Microelectronics of Barcelona
Spain

Keywords

CMOS built-in sensor, Chemical technology, Measurement of RF CMOS circuits, measurement of RF CMOS circuits, Circuits electrònics, :Enginyeria electrònica::Circuits electrònics [Àrees temàtiques de la UPC], Detectors, TP1-1185, CMOS integrated circuits, Article, CMOS thermal sensor, :Enginyeria electrònica::Instrumentació i mesura::Sensors i actuadors [Àrees temàtiques de la UPC], Built-in test and measurement, Àrees temàtiques de la UPC::Enginyeria electrònica::Instrumentació i mesura::Sensors i actuadors, Electronic circuits, Àrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònics, built-in test and measurement

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