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Characterization of wafer-scale CVD graphene grown on sapphire and SiC: a direct comparison

descriptionPublicationkeyboard_double_arrow_right Conference object , Other literature type , Article 01 Jan 2019 English Publisher:ZenodoFunded by:EC | Car2TERA

Authors: Sitek, Jakub; McAlesee, Clifford; Conran, Ben; Pasternak, Iwona; Czerniak-Losiewicz, Karolina; Zdrojek, Mariusz; Teo, Ken; +1 Authors

doi: 10.5281/zenodo.3475140 , 10.5281/zenodo.3475139

Characterization of wafer-scale CVD graphene grown on sapphire and SiC: a direct comparison

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Abstract

Graphene grown on dielectric substrates is posed to have awide range of application, including electronics industry oras a growth template for 2D heterostructures. Among insulating substrates for graphene growth, sapphire and SiC are the most promising [1,2]. SiC is widely recognized as a substrate for the growth of high quality graphene suitable for electronics due to its excellent mobility [3]. However, the potential of sapphire, which is more affordable than SiC, is yet to be fully unveiled [4]. In this study, we compare (by means of AFM, Raman and Hall measurements) graphen e on sapphire and SiC grown at the same process conditions. We show significant differences between substrates and suggest potential areas of applications.

Related Organizations

Warsaw University of Technology
Poland

Keywords

SiC, sapphire, graphene

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